The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same.
本发明涉及一种用于制造高质量半导体单晶锭的装置以及使用该装置的方法。
The invention discloses a technology for the directional solidification growth of polycrystalline silicon ingot, belonging to the preparation of semiconductor material silicon crystal.
一种定向凝固生长多晶硅锭工艺，本发明属于半导体材料硅晶体的制备。
The key to fining the structure of ingot casting lies in the formation of a number of fine equiaxed crystal grains.
金属铸态组织细化的关键是获得大量细小等轴晶。
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